The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Dec. 15, 2017
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Boe Optoelectronics Technology Co., Ltd., Anhui, CN;

Inventors:

Dezhi Xu, Beijing, CN;

Xianxue Duan, Beijing, CN;

Kui Gong, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/467 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 29/786 (2006.01); H01L 27/32 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/467 (2013.01); H01L 21/3086 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78693 (2013.01); H01L 27/1225 (2013.01); H01L 27/3262 (2013.01);
Abstract

A thin film transistor, a manufacturing method thereof, and a method for manufacturing an array substrate are provided. The method for manufacturing the thin film transistor includes: forming an active layer film on a base; and forming a source electrode and a drain electrode of the thin film transistor using a conductive photoresist.


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