The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Jun. 02, 2016
Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventors:

Tadayoshi Miyamoto, Sakai, JP;

Fumiki Nakano, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 29/786 (2006.01); H01L 27/146 (2006.01); H04N 21/435 (2011.01); H04N 21/439 (2011.01); H04N 21/44 (2011.01); H04N 21/462 (2011.01); H04N 21/845 (2011.01); H01L 23/532 (2006.01); H04N 21/488 (2011.01);
U.S. Cl.
CPC ...
H01L 21/3205 (2013.01); H01L 21/768 (2013.01); H01L 23/522 (2013.01); H01L 23/5329 (2013.01); H01L 23/53204 (2013.01); H01L 27/146 (2013.01); H01L 29/786 (2013.01); H04N 21/435 (2013.01); H04N 21/439 (2013.01); H04N 21/44 (2013.01); H04N 21/462 (2013.01); H04N 21/8456 (2013.01); H04N 21/4884 (2013.01);
Abstract

An active matrix substrate includes a substrate; gate lines arranged on the substrateand extend in a first direction; source lines Si arranged on the substrateand extend in a second direction that is different from the first direction; transistorsarranged in correspondence to points of intersection between the gate lines and the source lines, respectively, and are connected with the gate lines and the source lines; and an insulating layer. At least either the gate lines and the source lines are connected with electrodes of the transistors via contact holes in the insulating layer, and are formed to satisfy at least either i) having a greater film thickness or ii) being formed with a material having a smaller specific resistance, as compared with the electrodes of the transistors to which the lines are connected via the contact holes in the insulating layer.


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