The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Jun. 12, 2017
Hitachi Kokusai Electric Inc., Tokyo, JP;
Satoshi Shimamoto, Toyama, JP;
Yoshiro Hirose, Toyama, JP;
Hajime Karasawa, Toyama, JP;
Ryota Horiike, Toyama, JP;
Naoharu Nakaiso, Toyama, JP;
Yoshitomo Hashimoto, Toyama, JP;
Hitachi Kokusai Electric, Inc., Tokyo, JP;
Abstract
There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.