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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10199214 B1

PDFFull Text
Date of Patent:
Feb. 05, 2019

Filed:

Jun. 26, 2015

Insulator, capacitor with the same and fabrication method thereof, and method for fabricating semiconductor device

Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventors:

Kwan-Soo Kim, Cheongju-si, KR;

Soon-Wook Kim, Heverlee, BE;

Assignee:

MagnaChip Semiconductor, Ltd., Cheongju-si, KR;

Attorney:

NSIP Law

Primary Examiner:

Eric Thomas

Assistant Examiner:

Arun Ramaswamy

Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/538 (2006.01); H01L 21/3213 (2006.01); H01L 23/528 (2006.01); H01L 21/311 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01); H01L 21/314 (2006.01); H01L 49/02 (2006.01); B32B 37/02 (2006.01); H01G 4/33 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02178 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02181 (2013.01); H01L 21/02274 (2013.01); H01L 21/28556 (2013.01); H01L 21/3142 (2013.01); H01L 21/31111 (2013.01); H01L 21/3213 (2013.01); H01L 21/768 (2013.01); H01L 21/7684 (2013.01); H01L 23/528 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/53214 (2013.01); H01L 28/40 (2013.01); B32B 37/02 (2013.01); B32B 2311/00 (2013.01); B32B 2311/24 (2013.01); B32B 2457/00 (2013.01); H01G 4/33 (2013.01); H01L 2924/0002 (2013.01); Y10T 156/10 (2015.01); Y10T 428/2495 (2015.01); Y10T 428/26 (2015.01);
Abstract

Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (AlO) layer and a hafnium oxide (HfO) layer are laminated alternately in an iterative manner and a bottom layer and a top layer are formed of the same material; and a second electrode disposed on the insulator.

Find Patent Forward Citations

Kim, Kwan-Soo. (2019). Insulator, capacitor with the same and fabrication method thereof, and method for fabricating semiconductor device (U.S. Patent No. 10199214). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10199214

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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