The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

May. 26, 2017
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

I-Heng Huang, San Diego, CA (US);

Benish Babu, San Diego, CA (US);

Steven Haehnichen, San Diego, CA (US);

Robert Coleman, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/28 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3418 (2013.01); G11C 11/5642 (2013.01); G11C 16/28 (2013.01); G11C 16/3495 (2013.01); G06F 3/0619 (2013.01);
Abstract

A flash memory device includes an array of non-volatile memory (NVM) cells, at least one detection NVM cell, and a sensing circuit. The array of NVM cells are configured to store data. The sensing circuit is coupled to the at least one detection NVM cell and is configured to measure a charge on the at least one detection NVM cell. The sensing circuit is also configured to compare the measured charge with a threshold charge level and to trigger a refresh of the array of NVM cells in response to the measured charge being less than the threshold charge level.


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