The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Apr. 19, 2017
Applicant:
Futurewei Technologies, Inc., Plano, TX (US);
Inventors:
Huapu Pan, San Jose, CA (US);
Zongrong Liu, Pleasanton, CA (US);
Hongzhen Wei, Pleasanton, CA (US);
Hongmin Chen, Davis, CA (US);
Assignee:
Futurewei Technologies, Inc., Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/136 (2006.01); G02B 6/122 (2006.01); G02B 6/132 (2006.01); G02B 6/30 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); G02B 6/1223 (2013.01); G02B 6/132 (2013.01); G02B 6/305 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12195 (2013.01);
Abstract
An edge coupling device including a substrate, a buried oxide disposed over the substrate, a cladding material disposed over the buried oxide, where the cladding material includes a trench, an inversely tapered silicon waveguide disposed within the cladding material beneath the trench, and a ridge waveguide disposed within the trench, where the ridge waveguide and the inversely tapered silicon waveguide are vertically-aligned with each other.