The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Aug. 29, 2016
Honeywell International Inc., Morris Plains, NJ (US);
Cornel P. Cobianu, Bucharest, RO;
Bogdan-Catalin Serban, Bucharest, RO;
Viorel Georgel Dumitru, Prahova, RO;
Octavian Buiu, Bucharest, RO;
Alisa Stratulat, Bucharest, RO;
Mihai Brezeanu, Bucharest, RO;
Honeywell International Inc., Morris Plains, NJ (US);
Abstract
A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (pdoped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.