The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Jul. 24, 2012
Applicants:

Matthias Merz, Leuven, BE;

Aurelie Humbert, Brussels, BE;

Roel Daamen, Herkenbosch, NL;

David Tio Castro, Oud-Heverlee, BE;

Inventors:

Matthias Merz, Leuven, BE;

Aurelie Humbert, Brussels, BE;

Roel Daamen, Herkenbosch, NL;

David Tio Castro, Oud-Heverlee, BE;

Assignee:

ams International AG, Rapperswil, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 25/00 (2006.01); G01N 27/12 (2006.01); G01N 25/18 (2006.01); G01N 27/22 (2006.01); G01N 33/00 (2006.01); G01N 33/18 (2006.01);
U.S. Cl.
CPC ...
G01N 27/128 (2013.01); G01N 25/18 (2013.01); G01N 27/121 (2013.01); G01N 27/125 (2013.01); G01N 27/22 (2013.01); G01N 33/004 (2013.01); G01N 33/1826 (2013.01); G01N 33/18 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/1461 (2013.01);
Abstract

Disclosed is an integrated circuit comprising a substrate () carrying a plurality of circuit elements; a metallization stack () interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion () and a second metal portion (); a passivation stack () covering the metallization stack; a gas sensor including a sensing material portion () on the passivation stack; a first conductive portion () extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion () extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.


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