The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Jun. 08, 2015
Applicant:

Hitachi Automotive Systems, Ltd., Hitachinaka-shi, Ibaraki, JP;

Inventors:

Nobutake Tsuyuno, Tokyo, JP;

Eiichi Ide, Tokyo, JP;

Takeshi Tokuyama, Tokyo, JP;

Assignee:

HITACHI AUTOMOTIVE SYSTEMS, LTD, Hitachinaka-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 7/20 (2006.01); H01L 23/473 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H02M 1/084 (2006.01); H02M 7/00 (2006.01); H02M 7/5387 (2007.01); H01L 21/48 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H05K 7/20927 (2013.01); H01L 21/4878 (2013.01); H01L 21/56 (2013.01); H01L 23/3142 (2013.01); H01L 23/473 (2013.01); H01L 23/4735 (2013.01); H01L 23/49541 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01); H01L 25/07 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H02M 1/084 (2013.01); H02M 7/003 (2013.01); H02M 7/5387 (2013.01); H01L 23/49537 (2013.01); H01L 23/49575 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/40137 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2924/181 (2013.01);
Abstract

An object of the present invention is to provide a power conversion device that suppresses a bypass flow and has superior heat dissipation performance. The power conversion device according to the present invention includes a power semiconductor moduleand a flow channel formation bodyon which the power semiconductor moduleis disposed. The power semiconductor modulehas a high thermal conductorwhich is disposed at a position between a semiconductor chip and the flow channel formation bodyand a sealing material that seals a power semiconductor element and the high thermal conductor. The high thermal conductorhas a fin protruding to the flow channel formation bodyat the side of the flow channel formation bodyand a part of the sealing material surrounding the fin and a leading edge of the fin are on almost the same plane.


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