The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Sep. 16, 2016
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Zhongze Wang, San Diego, CA (US);
Guoqing Chen, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/02 (2006.01); H05K 1/11 (2006.01); H05K 3/40 (2006.01); H05K 3/42 (2006.01); H01F 27/28 (2006.01); H01F 27/29 (2006.01); H01F 41/04 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01F 17/00 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H05K 1/115 (2013.01); H01F 17/0006 (2013.01); H01F 27/2804 (2013.01); H01F 27/29 (2013.01); H01F 41/042 (2013.01); H01L 23/5227 (2013.01); H01L 23/5283 (2013.01); H05K 3/4038 (2013.01); H05K 3/421 (2013.01); H01L 23/5329 (2013.01);
Abstract
A partial metal fill is provided within the footprint of an ultra-thick-metal (UTM) conductor on a dielectric layer to strengthen the dielectric layer to inhibit delamination of the UTM conductor without inducing significant electrical coupling between the UTM conductor and the partial metal fill.