The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Mar. 20, 2018
Applicant:

Commissariat Á L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Daniele Jahier Pagliari, Luserna San Giovanni, IT;

Edith Beigne, Meaudre, FR;

Yves Durand, Saint-Ismier, FR;

Massimo Poncino, Turin, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/00 (2006.01); G06F 7/38 (2006.01); H03K 3/011 (2006.01);
U.S. Cl.
CPC ...
H03K 19/0016 (2013.01); G06F 7/38 (2013.01); H03K 3/011 (2013.01); G06F 2207/382 (2013.01); H03K 2217/0018 (2013.01);
Abstract

The invention concerns a circuit comprising: a processing circuit () comprising a plurality of circuit domains (), each circuit domain () comprising a plurality of transistors and being configured to apply one or more corresponding transistor biasing voltages to said transistors; and a control circuit () configured to determine, based on at least a selected accuracy setting of the processing circuit, the level of said one or more transistor biasing voltages to be applied in each of said circuit domains, the control circuit () being further configured to cause said transistor biasing voltages to be applied to the circuit domains.


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