The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Oct. 05, 2015
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventor:

Winfried Bakalski, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 1/50 (2006.01); H03H 7/38 (2006.01); H04B 1/04 (2006.01); H01F 29/02 (2006.01); H03H 7/40 (2006.01); H03H 7/01 (2006.01); H03H 7/09 (2006.01);
U.S. Cl.
CPC ...
H03H 7/38 (2013.01); H01F 29/02 (2013.01); H03H 7/0115 (2013.01); H03H 7/40 (2013.01); H04B 1/0458 (2013.01); H03H 7/09 (2013.01);
Abstract

An impedance matching network includes a first terminal, a second terminal, and a reference potential terminal. The impedance matching network further includes a first shunt branch between the first terminal and the reference potential terminal, the first shunt branch including a capacitive element. The impedance matching network also includes a second shunt branch between the second terminal and the reference potential terminal, the second shunt branch including an inductive element. Furthermore, the impedance matching network includes a transmission line transformer with a first inductor path and a second inductor path, wherein the first inductor path connects the first terminal and the second terminal. An alternative impedance matching network includes a transformer and an adaptive matching network. The transformer is configured to transform an impedance connected to a first port so that a corresponding transformed impedance lies within a confined impedance region in a complex impedance plane.


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