The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Metal pillars are placed adjacent to NPN transistor arrays that are used in the power amplifier for RF power generation. By placing the metal pillars in intimate contact with the silicon substrate, the heat generated by the NPN transistor arrays flows down into the silicon substrate and out the metal pillar. The metal pillar also forms an electrical ground connection in close proximity to the NPN transistors to function as a grounding point for emitter ballast resistors, which form an optimum electrothermal configuration for a linear SiGe power amplifier.
