The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Jan. 08, 2016
Silicon Power Corporation, Clifton Park, NY (US);
John E. Waldron, Clifton Park, NY (US);
Kenneth Brandmier, Coatesville, PA (US);
James K. Azotea, Saratoga Springs, NY (US);
Silicon Power Corporation, Clifton Park, NY (US);
Abstract
A circuit including a source, a load, and an isolation circuit for controllably isolating the load from the source. The isolation circuit is disposed between the source and the load. The isolation circuit includes at least one insulated-gate bipolar transistor (IGBT) and at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor. When no fault condition exists, the GTO is configured to be on to couple the load to the source. When a fault condition exists, the at least one IGBT is configured to turn on. After the at least one IGBT turns on, the at least one GTO is configured to turn off. After a predetermined amount of time after the at least one GTO turns off, the at least one IGBT is configured to turn off.