The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Dec. 08, 2014
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Sebastian Taeger, Bad Abbach, DE;
Alexander Bachmann, Ismaning, DE;
OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg, DE;
Abstract
A semiconductor laser diode is specified, comprising a semiconductor layer sequence () with semiconductor layers applied vertically one above another with an active layer (), which emits laser radiation via a radiation coupling-out surface during operation, wherein the radiation coupling-out surface is formed by a side surface of the semiconductor layer sequence (), and a heat barrier layer () and a metallic contact layer () laterally adjacent to one another on a main surface () of the semiconductor layer sequence (), wherein the heat barrier layer () is formed by an electrically insulating porous material (). As a result, the heat arising during operation is conducted via the p-type electrode () to a heat sink () and the formation of a two-dimensional temperature gradient is avoided. A thermal lens in the edge emitter is thus counteracted. Furthermore, a method for producing a semiconductor laser diode and a semiconductor laser diode arrangement are specified.