The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Aug. 24, 2017
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Isao Takasu, Setagaya, JP;

Atsushi Wada, Kawasaki, JP;

Satomi Taguchi, Ota, JP;

Mitsuyoshi Kobayashi, Ota, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/42 (2006.01); G01T 1/24 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/426 (2013.01); G01T 1/242 (2013.01); H01L 51/0036 (2013.01); H01L 51/0043 (2013.01); H01L 51/0047 (2013.01); H01L 2251/301 (2013.01); H01L 2251/303 (2013.01);
Abstract

According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first conductive layer and the second conductive layer. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region including a portion provided around the particles. A diameter is not less than 1 nanometer and not more than 20 nanometers for at least a portion of the particles. A first bandgap energy of the plurality of particles is larger than a second bandgap energy of the organic semiconductor region.


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