The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Sep. 03, 2015
Dic Corporation, Tokyo, JP;
National University Corporation Yamagata University, Yamagata-shi, JP;
Tomoko Okamoto, Sakura, JP;
Kenichi Yatsugi, Sakura, JP;
Yoshinori Katayama, Sakura, JP;
Kenjiro Fukuda, Wako, JP;
Daisuke Kumaki, Yonezawa, JP;
Shizuo Tokito, Yonezawa, JP;
DIS Corporation, Tokyo, JP;
National University Corporation Yamagata University, Yamagata-shi, JP;
Abstract
Provided is a method of manufacturing a thin film transistor satisfying the relation of L<5 μm. The method includes a process of forming a streak portion by performing transfer printing on a support using a release member which is provided with an ink streak portion for forming source and drain electrodes and has mold releasability, and baking the streak portion to thereby form the source electrode constituted by a conductor and the drain electrode constituted by a conductor. In the method manufacturing a thin film transistor in which the source and drain electrodes obtained above, a semiconductor layer, an insulator layer, and a gate electrode constituted by a conductor are laminated, after the baking, in a laminated cross section of the thin film transistor to be manufactured is set to A and a channel length thereof is set to L, the ink streak portion is provided so as to satisfy the condition of L/A≥0.05.