The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Sep. 18, 2014
Applicant:

Headway Technologies, Inc., Milpitas, CA (US);

Inventors:

Robert Beach, Los Gatos, CA (US);

Guenole Jan, San Jose, CA (US);

Yu-Jen Wang, San Jose, CA (US);

Ru-Ying Tong, Los Gatos, CA (US);

Assignee:

Headway Technologies, Inc., Milpitas, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01L 43/10 (2006.01); H01F 10/12 (2006.01); H01L 29/82 (2006.01); H01F 41/30 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01F 10/123 (2013.01); H01F 10/3272 (2013.01); H01F 41/307 (2013.01); H01L 27/222 (2013.01); H01L 27/224 (2013.01); H01L 29/82 (2013.01); H01L 43/10 (2013.01); H01F 10/3286 (2013.01);
Abstract

A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an FL2/AF coupling/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2)laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the SAF structure.


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