The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Apr. 30, 2018
Applicants:

Everlight Electronics Co., Ltd., New Taipei, TW;

Southern Taiwan University of Science and Technology, Tainan, TW;

Inventor:

Ming-Lun Lee, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/22 (2010.01); H01L 33/10 (2010.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/56 (2010.01); H01L 33/60 (2010.01); H01L 33/06 (2010.01); H01L 33/42 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/12 (2013.01); H01L 33/20 (2013.01); H01L 33/42 (2013.01); H01L 33/56 (2013.01); H01L 33/60 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, such that A1 and A2 satisfy the relation of 0.1≤A2/(A1+A2)≤0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.


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