The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Feb. 03, 2016
Dowa Electronics Materials Co., Ltd., Chiyoda-ku, Tokyo, JP;
Takehiko Fujita, Gotenba, JP;
Yasuhiro Watanabe, Akita, JP;
DOWA Electronics Materials Co., Ltd., Chiyoda-ku, Tokyo, JP;
Abstract
Provided is a III-nitride semiconductor light-emitting device having excellent device lifetime as compared with conventional devices and a method of producing the same. A III-nitride semiconductor light-emitting devicehas an n-type semiconductor layer, a light emitting layercontaining at least Al, an electron blocking layer, and a p-type semiconductor layerin this order. The light emitting layerhas a quantum well structure having well layersand barrier layers. The electron blocking layeris adjacent to the light emitting layerand is formed from a layer having an Al content higher than that of the barrier layersand the p-type semiconductor layer. The electron blocking layerhas a Si-based doped region layer