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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10193010 B1

PDFFull Text
Date of Patent:
Jan. 29, 2019

Filed:

Apr. 28, 2017

Light emitting element

Applicant:

Fuji Xerox Co., Ltd., Tokyo, JP;

Inventors:

Naoki Jogan, Kanagawa, JP;

Jun Sakurai, Kanagawa, JP;

Akemi Murakami, Kanagawa, JP;

Takashi Kondo, Kanagawa, JP;

Junichiro Hayakawa, Kanagawa, JP;

Assignee:

FUJI XEROX CO., LTD., Minato-ku, Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Su C Kim

Int. Cl.
CPC ...
H01L 31/153 (2006.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 27/15 (2006.01); H01S 5/026 (2006.01); H01S 5/183 (2006.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01); H01S 5/0683 (2006.01);
U.S. Cl.
CPC ...
H01L 31/153 (2013.01); H01L 27/15 (2013.01); H01L 31/022408 (2013.01); H01L 31/022416 (2013.01); H01L 31/03529 (2013.01); H01L 31/035209 (2013.01); H01L 31/035236 (2013.01); H01L 33/06 (2013.01); H01L 33/24 (2013.01); H01S 5/0265 (2013.01); H01S 5/18313 (2013.01); H01L 33/145 (2013.01); H01L 33/38 (2013.01); H01S 5/0207 (2013.01); H01S 5/0425 (2013.01); H01S 5/0683 (2013.01); H01S 5/1835 (2013.01); H01S 5/18347 (2013.01);
Abstract

A light emitting element includes: a light emitting part that is formed on a front surface side of a semi-insulating substrate; and a light receiving part that is formed on the front surface side, that shares a semiconductor layer with the light emitting part, and that receives light propagating in a lateral direction through the semiconductor layer from the light emitting part, wherein anode electrodes and cathode electrodes of the light emitting part and the light receiving part are formed on the front surface side in a state in which the anode electrodes are separated from each other and the cathode electrodes are separated from each other.

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