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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10193001 B1

PDFFull Text
Date of Patent:
Jan. 29, 2019

Filed:

Sep. 07, 2017

Nitride semiconductor device

Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Daisuke Shibata, Kyoto, JP;

Kenichiro Tanaka, Osaka, JP;

Assignee:

PANASONIC CORPORATION, Osaka, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Sheikh Maruf

Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 21/82 (2006.01); H01L 29/47 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 29/778 (2006.01); H01L 27/04 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 27/095 (2006.01); H01L 27/098 (2006.01); H01L 29/808 (2006.01); H01L 29/812 (2006.01); H01L 29/861 (2006.01); H01L 29/868 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/205 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/822 (2013.01); H01L 21/8234 (2013.01); H01L 27/04 (2013.01); H01L 27/06 (2013.01); H01L 27/088 (2013.01); H01L 27/095 (2013.01); H01L 27/098 (2013.01); H01L 29/0619 (2013.01); H01L 29/205 (2013.01); H01L 29/41766 (2013.01); H01L 29/47 (2013.01); H01L 29/778 (2013.01); H01L 29/7788 (2013.01); H01L 29/7789 (2013.01); H01L 29/808 (2013.01); H01L 29/812 (2013.01); H01L 29/861 (2013.01); H01L 29/868 (2013.01); H01L 29/0646 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01); H01L 29/42316 (2013.01);
Abstract

A nitride semiconductor device is provided that includes: a substrate; an n-type drift layer above the front surface of the substrate; a p-type base layer above the n-type drift layer; a gate opening in the base layer that reaches the drift layer; an n-type channel forming layer that covers the gate opening and has a channel region; a gate electrode above a section of the channel forming layer in the gate opening; an opening that is separated from the gate electrode and reaches the base layer; an opening formed in a bottom surface of said opening and reaching the drift layer; a source electrode covering the openings; and a drain electrode on the rear surface of the substrate.

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