The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Dec. 20, 2017
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Allan T. Mitchell, Heath, TX (US);

Mark Eskew, Carrollton, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); A01G 25/16 (2006.01); G01N 27/22 (2006.01); G01N 15/06 (2006.01); H01L 29/788 (2006.01); G01N 15/00 (2006.01); A01G 25/00 (2006.01); G01N 35/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/788 (2013.01); A01G 25/167 (2013.01); G01N 15/0606 (2013.01); G01N 15/0656 (2013.01); G01N 27/223 (2013.01); A01G 25/00 (2013.01); G01N 2015/0026 (2013.01); G01N 2035/00881 (2013.01);
Abstract

An atmometer system based on an analog floating-gate structure and circuit. The floating-gate circuit includes a floating-gate electrode that serves as a gate electrode for a transistor and a plate of a storage capacitor. A conductor element exposed at the surface of the integrated circuit is electrically connected to the floating-gate electrode; reference conductor elements biased to ground are also at the surface of the integrated circuit. In operation, the transistor is biased and moisture is dispensed at the surface. The drain current of the transistor changes as the floating-gate electrode discharges via the surface conductors and a conduction path presented by the moisture. The elapsed time until the drain current stabilizes indicates the evaporation rate.


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