The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Aug. 21, 2015
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/47 (2006.01); H01L 29/24 (2006.01); H01L 21/02 (2006.01); C01G 41/00 (2006.01); H01L 21/46 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01L 21/16 (2006.01); H01L 21/00 (2006.01); H01L 29/786 (2006.01); H01L 21/467 (2006.01); H01L 21/477 (2006.01); H01L 29/26 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); C01G 41/00 (2013.01); C01G 41/006 (2013.01); C23C 14/08 (2013.01); C23C 14/083 (2013.01); C23C 14/086 (2013.01); C23C 14/34 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/467 (2013.01); H01L 21/477 (2013.01); H01L 29/24 (2013.01); H01L 29/263 (2013.01); H01L 29/786 (2013.01); C01P 2006/40 (2013.01);
Abstract
There is provided an oxide semiconductor film composed of nanocrystalline oxide or amorphous oxide, wherein the oxide semiconductor film includes indium, tungsten and zinc, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide semiconductor film is higher than 0.5 atomic % and equal to or lower than 5 atomic %, and an electric resistivity is equal to or higher than 10Ωcm. There is also provided a semiconductor device including the oxide semiconductor film.