The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Dec. 22, 2017
Applicant:

Silanna Asia Pte Ltd, Singapore, SG;

Inventors:

Shanghui Larry Tu, San Diego, CA (US);

Michael A. Stuber, Rancho Santa Fe, CA (US);

Befruz Tasbas, San Diego, CA (US);

Stuart B. Molin, Carlsbad, CA (US);

Raymond Jiang, Raleigh, NC (US);

Assignee:

Silanna Asia Pte Ltd, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/10 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/84 (2006.01); H01L 21/74 (2006.01); H01L 29/66 (2006.01); H01L 21/48 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 29/417 (2006.01); H01L 23/522 (2006.01); H01L 23/535 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/786 (2013.01); H01L 21/4825 (2013.01); H01L 21/4853 (2013.01); H01L 21/743 (2013.01); H01L 21/76898 (2013.01); H01L 21/84 (2013.01); H01L 23/481 (2013.01); H01L 23/4951 (2013.01); H01L 23/49513 (2013.01); H01L 23/49517 (2013.01); H01L 23/49524 (2013.01); H01L 23/49541 (2013.01); H01L 23/49568 (2013.01); H01L 23/49575 (2013.01); H01L 23/5225 (2013.01); H01L 23/535 (2013.01); H01L 24/40 (2013.01); H01L 24/41 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 24/84 (2013.01); H01L 25/50 (2013.01); H01L 27/1203 (2013.01); H01L 27/1207 (2013.01); H01L 29/0649 (2013.01); H01L 29/1087 (2013.01); H01L 29/1095 (2013.01); H01L 29/41766 (2013.01); H01L 29/66659 (2013.01); H01L 29/66681 (2013.01); H01L 29/66696 (2013.01); H01L 29/7816 (2013.01); H01L 29/7824 (2013.01); H01L 29/7835 (2013.01); H01L 23/49562 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/4001 (2013.01); H01L 2224/40141 (2013.01); H01L 2224/40245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48108 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73213 (2013.01); H01L 2224/73265 (2013.01);
Abstract

A semiconductor package includes a leadframe, having perimeter package leads and a ground voltage lead, a bottom semiconductor die flip-chip mounted to the leadframe, and a top semiconductor die. The bottom semiconductor die has a first frontside active layer with first frontside electrical contacts electrically connected to the leadframe, a first backside portion, and a buried oxide layer situated between the first frontside active layer and the first backside portion. The top semiconductor die is mounted to the first backside portion. The first frontside active layer includes a circuit electrically connected to the first backside portion by a backside electrical connection through the buried oxide layer. The first backside portion of the bottom semiconductor die is electrically connected to the ground voltage lead through a first electrical contact of the first frontside electrical contacts to minimize crosstalk.


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