The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Oct. 29, 2014
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Akihiko Furukawa, Chiyoda-ku, JP;
Shoichi Orita, Chiyoda-ku, JP;
Hiroki Muraoka, Chiyoda-ku, JP;
Atsushi Narazaki, Chiyoda-ku, JP;
Tsuyoshi Kawakami, Chiyoda-ku, JP;
Yuji Murakami, Chiyoda-ku, JP;
MITSUBISHI ELECTRIC CORPORATION, Chiyoda-ku, JP;
Abstract
In the present application, a power semiconductor device includes a first-conductive-type first base region having a first principal surface and a second principal surface opposite to the first principal surface, a second-conductive-type second base region disposed on the first principal surface and at least three groove parts parallel to each other disposed from a surface of the second base region. The device further includes insulating films covering inner walls of the respective groove parts, conductive trench gates filled on the insulating films, a first-conductive-type emitter region disposed in the second base region, and a second-conductive-type collector region disposed on the second principal surface of the first base region. The trench gates embedded in the first groove part and the third groove part are electrically connected to the gate electrode, and the trench gate embedded in the second groove part is electrically connected to the emitter electrode.