The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Dec. 04, 2015
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventor:
Gerhard Schmidt, Wernberg-Wudmath, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01); H01L 29/78 (2006.01); H01L 21/22 (2006.01); H01L 21/265 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66666 (2013.01); H01L 21/221 (2013.01); H01L 21/26506 (2013.01); H01L 29/1095 (2013.01); H01L 29/167 (2013.01); H01L 29/66333 (2013.01); H01L 29/66712 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/7827 (2013.01); H01L 29/6609 (2013.01); H01L 29/861 (2013.01);
Abstract
A method for forming a semiconductor device includes incorporating chalcogen dopant atoms into a semiconductor doping region of a semiconductor substrate of a semiconductor device. The method further includes incorporating heavy metal atoms into the semiconductor doping region.