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H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/12 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/3065 (2006.01); H01L 21/3115 (2006.01); H01L 21/033 (2006.01);

U.S. Cl.

CPC ...

H01L 29/42368 (2013.01); H01L 21/02126 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/02332 (2013.01); H01L 21/049 (2013.01); H01L 21/0475 (2013.01); H01L 21/3065 (2013.01); H01L 21/3115 (2013.01); H01L 29/045 (2013.01); H01L 29/0657 (2013.01); H01L 29/1095 (2013.01); H01L 29/12 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01); H01L 29/7813 (2013.01); H01L 21/0337 (2013.01); H01L 21/0485 (2013.01);

Abstract

A silicon carbide semiconductor device includes a silicon carbide substrate, a gate oxide film, and a gate electrode. A trench is provided in the main surface to have a side surface and a bottom portion. A contact point between a first side surface portion and a second side surface portion is located in a third impurity region. An angle formed by the first side surface portion and a straight line extending through the contact point and parallel to the main surface is smaller than an angle formed by the second side surface portion and a boundary surface between a first impurity region and a second impurity region. A thickness of a portion of the gate oxide film on the contact point between the main surface and the first side surface portion is larger than a thickness of a portion of the gate oxide film on the second impurity region.

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