The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Apr. 08, 2016
Shenzhen China Star Optoelectronics Technology Co., Ltd., Guangdong, CN;
Abstract
A complementary thin film transistor and manufacturing method thereof are provided. The complementary thin film transistor has a substrate, an n-type semiconductor layer, a p-type semiconductor layer, and an etched barrier layer. The substrate defines an n-type transistor region and a p-type transistor region adjacent to the n-type transistor region. The n-type semiconductor layer is disposed on the substrate and within the n-type transistor region, and has a metal oxide material. The p-type semiconductor layer is disposed on the substrate and within the p-type transistor region, and has an organic semiconductor material. The etched barrier layer is formed on the n-type semiconductor layer and disposed within the n-type transistor region and the p-type transistor region, and the p-type semiconductor layer is formed on the etched barrier layer.