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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10192928 B1

PDFFull Text
Date of Patent:
Jan. 29, 2019

Filed:

Sep. 15, 2017

Semiconductor device and method of manufacturing the same

Applicant:

Toshiba Memory Corporation, Minatu-ku, Tokyo, JP;

Inventors:

Natsuki Fukuda, Mie, JP;

Mutsumi Okajima, Mie, JP;

Atsushi Oga, Mie, JP;

Toshiharu Tanaka, Mie, JP;

Takeshi Yamaguchi, Mie, JP;

Takeshi Takagi, Mie, JP;

Masanori Komura, Mie, JP;

Assignee:

TOSHIBA MEMORY CORPORATION, Tokyo, JP;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Marvin Payen

Assistant Examiner:

Jeremy Joy

Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/10 (2006.01); H01L 21/822 (2006.01); H01L 27/115 (2017.01); H01L 29/792 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 27/06 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 27/11575 (2017.01); H01L 27/11573 (2017.01); H01L 27/11578 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 27/11551 (2017.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 21/311 (2013.01); H01L 21/3213 (2013.01); H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/8221 (2013.01); H01L 27/101 (2013.01); H01L 27/1157 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 29/7926 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 27/0688 (2013.01); H01L 27/249 (2013.01); H01L 27/2454 (2013.01);
Abstract

A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body contacting the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a side surface of the projecting part contacting an upper surface of the one of the first conductive films.

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