The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10192903 B1

Date of Patent:

Jan. 29, 2019

Filed:

Sep. 28, 2016

Method for manufacturing tft substrate

Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventors:

Xiaoxing Zhang, Guangdong, CN;

Xingyu Zhou, Guangdong, CN;

Yuan Jun Hsu, Guangdong, CN;

Assignee:

SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, CN;

Attorney:

Primary Examiner:

Asok K Sarkar

Int. Cl.

CPC ...

H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/77 (2017.01); H01L 21/265 (2006.01); H01L 21/3115 (2006.01); H01L 27/32 (2006.01); H01L 29/167 (2006.01); H01L 29/423 (2006.01); H01L 51/56 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);

U.S. Cl.

CPC ...

H01L 27/1277 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02592 (2013.01); H01L 21/02675 (2013.01); H01L 21/26513 (2013.01); H01L 21/31155 (2013.01); H01L 21/77 (2013.01); H01L 27/12 (2013.01); H01L 27/1218 (2013.01); H01L 27/1222 (2013.01); H01L 27/1251 (2013.01); H01L 27/3246 (2013.01); H01L 27/3248 (2013.01); H01L 27/3262 (2013.01); H01L 29/167 (2013.01); H01L 29/42364 (2013.01); H01L 51/56 (2013.01); H01L 21/02532 (2013.01); H01L 21/02686 (2013.01); H01L 29/66757 (2013.01); H01L 29/66765 (2013.01); H01L 29/78675 (2013.01); H01L 29/78678 (2013.01); H01L 2227/323 (2013.01);

Abstract

A method for manufacturing a TFT substrate is disclosed. The TFT substrate includes a drive TFT region and a display TFT region. The drive TFT region and the display TFT region are manufactured with different technologies, so that different requirements for TFT can be met. The manufacturing method according to the present disclosure mainly includes: forming a first amorphous silicon layer to obtain a drive TFT region; forming a second amorphous silicon layer to obtain a display TFT region; and then depositing a passivation layer and a flat layer, so that the TFT substrate is manufactured after following treatment steps.

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