The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Dec. 24, 2017
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, Hubei, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;
Wuhan China Star Optoelectronics Technology Co., Ltd, Wuhan, Hubei, CN;
Abstract
A method for manufacturing a LTPS array substrate includes: forming a source electrode and a drain electrode on a substrate, forming a poly-silicon layer in a first region and a second region of the substrate including the source electrode and the drain electrode, such that the poly-silicon layer of the first region has a thickness greater than that of the second region and the poly-silicon layer of the first region partially covers the source electrode and the drain electrode; passivating a surface of the poly-silicon layer in order to turn a part of the poly-silicon layer of the second region and the first region that is adjacent to the surface into an insulating layer; and forming a gate electrode on the insulating layer between the source electrode and the drain electrode. The LTPS technical process is simple and can reduce the producing costs.