The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

May. 02, 2016
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Inventors:

Tao Jiang, Beijing, CN;

Junhao Han, Beijing, CN;

Botao Song, Beijing, CN;

Liang Lin, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 27/1248 (2013.01);
Abstract

Embodiments of the present application provide a thin film transistor and a method of manufacturing the same, an array substrate and a display panel. The thin film transistor comprises, successively from the bottom up, a gate, a first common electrode located in the same layer as the gate, a gate insulating layer, an active layer, a pixel electrode, a source-drain electrode layer and a passivation layer located above the layer where the gate is located, and a second common electrode located on the passivation layer, and the thin film transistor further comprises at least one connection electrode located in a same layer as the pixel electrode, wherein at least two via holes are provided between the first common electrode and the second common electrode so as to connect the first common electrode and the second common electrode through the connection electrode.


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