The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Jan. 05, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A memory device may include a peripheral region and a cell region. The peripheral region may include a first substrate, a plurality of circuit elements disposed on the first substrate, a first insulating layer disposed on the plurality of circuit elements, and a first protective layer disposed in the first insulating layer. The cell region may include a second substrate disposed on the first insulating layer, wherein the ceil region includes a first impurity region, a channel region extending in a direction substantially perpendicular to an upper surface of the second substrate, a plurality of gate electrode layers stacked on the second substrate and adjacent to the channel region, and a first contact electrically connected to the first impurity region, wherein the first protective layer is disposed below the first impurity region, and has a shape corresponding to a shape of the first impurity region.