The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Jul. 25, 2016
Mitsubishi Electric Corporation, Tokyo, JP;
Tatsuya Fukase, Tokyo, JP;
Masaki Kato, Tokyo, JP;
Masahiko Fujita, Tokyo, JP;
Manabu Horita, Tokyo, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, Tokyo, JP;
Abstract
When a power semiconductor device is energized, heat generated from upper-side power semiconductor chips mounted on a P-potential electrode transfers to a first heat mass portion and a second heat mass portion, and heat generated from lower-side power semiconductor chips mounted on a intermediate potential electrode transfers to a resistor. A lead frame, the power semiconductor chip, an inner lead and the resistor are placed in symmetry with respect to a centerline, which can reduce the difference among the temperature increases of the power semiconductor chips when energized. In this way, transient temperature increase of the power semiconductor chip can be suppressed without adding a new member, such as a heat diffusion plate.