The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Mar. 06, 2014
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Hajime Akiyama, Tokyo, JP;

Akira Okada, Tokyo, JP;

Kinya Yamashita, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/10 (2006.01); H01L 21/66 (2006.01); H01L 23/532 (2006.01); G01R 31/26 (2014.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); G01R 31/26 (2013.01); H01L 22/14 (2013.01); H01L 23/53214 (2013.01); H01L 23/53242 (2013.01); H01L 2224/0603 (2013.01);
Abstract

A purpose of the present invention is to provide a semiconductor device that can restrain occurrence of partial discharge in evaluation of electric characteristics and can carry out failure analysis from the upper side of a measurement object. A semiconductor device according to the present invention includes: at least one electrode; a protective layer having at least one opening part provided such that a portion of the electrode is exposed at the opening part, and being formed to cover the other portion of the electrode excluding the portion of the electrode exposed at the opening part, the protective layer being insulative; and a conductive layer formed so as to cover the protective layer and the opening part and be directly connected to the electrode at the opening part.


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