logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10192795 B1

PDFFull Text
Date of Patent:
Jan. 29, 2019

Filed:

Apr. 13, 2016

Semiconductor device

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Kazuhisa Mori, Ibaraki, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McGinn I.P. Law Group, PLLC

Primary Examiner:

Telly Green

Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 23/34 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 22/30 (2013.01); H01L 23/34 (2013.01); H01L 27/0629 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/7815 (2013.01); H01L 29/8611 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor device including a power transistor is prevented from being broken. A cathode of a temperature sensing diode and a source of a power MOSFET are electrically coupled to each other so as to have the same potential. Such a characteristic point allows the temperature sensing diode to be disposed in a power MOSFET formation region without considering withstand voltage. This means that there is no need to provide an isolating structure that maintains a withstand voltage between the power MOSFET and the temperature sensing diode. Consequently, the power MOSFET and the temperature sensing diode can be closely disposed.

Find Patent Forward Citations

Loading…