The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Nov. 04, 2016
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/683 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02057 (2013.01); H01L 21/28512 (2013.01); H01L 21/6836 (2013.01); H01L 29/0626 (2013.01); H01L 29/4175 (2013.01); H01L 29/41766 (2013.01); H01L 29/66712 (2013.01); H01L 29/781 (2013.01); H01L 29/7835 (2013.01); H01L 29/1045 (2013.01); H01L 29/404 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01);
Abstract
A chemical solution cleaning process for removing backside contamination prior to metallization involves selective chemistries of a mixture containing NHOH and HOthat may be diluted to specific concentrations depending upon the topside metal and passivation of a semiconductor wafer, which is applied after removing a topside protection material to protect the topside circuitry.