The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Dec. 29, 2015
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Di Zhang, Niskayuna, NY (US);

Rui Zhou, Niskayuna, NY (US);

Xu She, Clifton Park, NY (US);

Assignee:

GENERAL ELECTRIC COMPANY, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/158 (2006.01); H02M 1/08 (2006.01); H01L 29/16 (2006.01); H02M 7/483 (2007.01); H02M 7/487 (2007.01); H02M 7/5387 (2007.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
G06F 1/324 (2013.01); G06F 1/3287 (2013.01); H01L 29/1608 (2013.01); H02M 1/08 (2013.01); H02M 3/158 (2013.01); H02M 7/483 (2013.01); H02M 7/487 (2013.01); H02M 7/5387 (2013.01); H02M 2001/007 (2013.01); H02M 2001/0054 (2013.01);
Abstract

A voltage converter may include a first set of silicon (Si)-based power devices coupled to a first direct current (DC) voltage source and a second set of Si-based power devices coupled to a second DC voltage source. The voltage converter may also include a first set of silicon-carbide (SiC)-based power devices coupled to the first set of Si-based power devices and to the second set of Si-based power devices. Each SiC-based power device of the first set of SiC-based power devices may switch at a higher frequency as compared to each Si-based power device of the first and second sets of the Si-based power electronic devices.


Find Patent Forward Citations

Loading…