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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10191326 B1

PDFFull Text
Date of Patent:
Jan. 29, 2019

Filed:

Dec. 01, 2016

Film for backlight unit and backlight unit and liquid crystal display including same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Chul Ho Jung, Gwangju, KR;

Hyun A Kang, Suwon-si, KR;

Soo Kyung Kwon, Seoul, KR;

Won Joo Lee, Pocheon-si, KR;

Eun Joo Jang, Suwon-si, KR;

Hyo Sook Jang, Suwon-si, KR;

Shin Ae Jun, Seongnam-si, KR;

Oul Cho, Seongnam-si, KR;

In Taek Han, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

Attorney:

Cantor Colburn LLP

Primary Examiner:

Deve E Valdez

Int. Cl.
CPC ...
G02F 1/13357 (2006.01); G02F 1/1335 (2006.01); F21V 8/00 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1336 (2013.01); G02B 6/005 (2013.01); G02F 1/133615 (2013.01); G02F 2001/133614 (2013.01); G02F 2202/32 (2013.01); G02F 2202/36 (2013.01); Y10T 428/1036 (2015.01); Y10T 428/24612 (2015.01); Y10T 428/24802 (2015.01); Y10T 428/31507 (2015.04); Y10T 428/31511 (2015.04); Y10T 428/31551 (2015.04); Y10T 428/31565 (2015.04); Y10T 428/31587 (2015.04); Y10T 428/31663 (2015.04); Y10T 428/31721 (2015.04); Y10T 428/31797 (2015.04); Y10T 428/31862 (2015.04); Y10T 428/31913 (2015.04); Y10T 428/31917 (2015.04); Y10T 428/31938 (2015.04); Y10T 428/31942 (2015.04);
Abstract

A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1:<().  Equation 1

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