Continuous system for fabricating multilayer heterostructures via hydride vapor phase epitaxy

Abstract

A Hydride Vapor Phase Epitaxy (HVPE) system is provided which comprises a deposition assembly comprising a plurality of deposition chambers and a plurality of separation chambers mounted together, each separation chamber having two opposing ends, each end mounted to a deposition chamber of the plurality of deposition chambers and in fluid communication with the deposition chamber via a fluid pathway, wherein each deposition chamber of the plurality of deposition chambers defines a deposition zone having a height h, each separation chamber defines a separation zone having a height hand a length l, and each fluid pathway has a height h, wherein h, hand lare selected to provide a predetermined interfacial transition region value between different material layers of a multilayer heterostructure; and a moveable belt configured to continuously convey a substrate mounted thereon through the plurality of deposition chambers and the plurality of separation chambers. The system further comprises a gas delivery assembly configured to deliver reactant gas mixtures to the deposition assembly for deposition on the substrate via HVPE.