The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Jan. 14, 2015
Applicant:
Dialog Semiconductor (Uk) Limited, Reading, GB;
Inventors:
Assignee:
Dialog Semiconductor (UK) Limited, Reading, GB;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); G05F 3/26 (2006.01); G05F 1/613 (2006.01); H02M 3/156 (2006.01); H02M 1/32 (2007.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); G05F 1/613 (2013.01); G05F 3/262 (2013.01); H02M 3/156 (2013.01); H02M 2001/322 (2013.01);
Abstract
A node that stores a charge is discharged in two phases, starting with a current controlled phase where a current mirror sink controls the current sunk from the node, and then moving to a second phase where a resistive discharge is provided. A pull down device such as a transistor switches from its saturation mode in the first phase to its linear mode in the second phase. a discharge circuit implementing this method provides optimized area and control for the discharge process as compared with approaches that rely solely on current mirroring or resistive discharging.