The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2019

Filed:

Jun. 11, 2018
Applicant:

Palo Alto Research Center Incorporated, Palo Alto, CA (US);

Inventors:

David K. Biegelsen, Portola Valley, CA (US);

JengPing Lu, Fremont, CA (US);

Janos Veres, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/09 (2006.01); H01Q 9/04 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01Q 9/0407 (2013.01); H01L 31/09 (2013.01); H01L 31/18 (2013.01);
Abstract

A method of forming an electronic field emission rectifier involves depositing a first metal layer, a dielectric, and a second metal layer on a substrate in that order. The dielectric layer and the second metal layer are patterned. Patterning the dielectric and second metal layers involves depositing a nanostructuring layer on the second metal layer. The nanostructuring layer self-assembles into removable regions embedded within a matrix. When the removable regions are removed, a pattern is formed in the matrix.


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