The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2019

Filed:

May. 22, 2015
Applicant:

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v., Munich, DE;

Inventors:

Tobias Erlbacher, Poxdorf, DE;

Vincent Lorentz, Erlangen, DE;

Reinhold Waller, Neunkirchen am Brand, DE;

Gudrun Rattmann, Heroldsbach, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01M 10/42 (2006.01); H01L 29/861 (2006.01); H01L 29/45 (2006.01); H01L 29/06 (2006.01); H01L 23/525 (2006.01); H01L 29/36 (2006.01); H01L 23/532 (2006.01); H01L 29/417 (2006.01); B60L 3/00 (2006.01); B60L 3/04 (2006.01); B60L 11/18 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01M 2/34 (2006.01);
U.S. Cl.
CPC ...
H01M 10/425 (2013.01); B60L 3/0046 (2013.01); B60L 3/04 (2013.01); B60L 11/1879 (2013.01); H01L 23/5256 (2013.01); H01L 23/53214 (2013.01); H01L 29/0684 (2013.01); H01L 29/0688 (2013.01); H01L 29/36 (2013.01); H01L 29/417 (2013.01); H01L 29/45 (2013.01); H01L 29/452 (2013.01); H01L 29/456 (2013.01); H01L 29/861 (2013.01); H01L 29/8611 (2013.01); H01M 10/4207 (2013.01); H01L 23/5252 (2013.01); H01L 29/1608 (2013.01); H01L 29/20 (2013.01); H01L 2924/0002 (2013.01); H01M 2/348 (2013.01); H01M 2200/103 (2013.01); H01M 2220/20 (2013.01); H01M 2220/30 (2013.01); Y02T 10/705 (2013.01); Y02T 10/7005 (2013.01);
Abstract

A semiconductor substrate has a first doping region arranged at a surface and a second doping region adjacent to the first doping region. A p-n junction between the doping regions is at least partially arranged less than 5 μm away from a contact area of the first doping region arranged at the substrate surface. A first contact structure is in contact with the first doping region in the contact area of the first doping region and has at least partially an electrically conductive material provided for a diffusion into the semiconductor substrate. The first contact structure is configured so that the conductive material provided for a diffusion into the substrate diffuses at least partially through the first doping region into the second doping region in case predefined trigger conditions occur. A second contact structure is in contact with the second doping region in a contact area of the second doping region.


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