The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2019

Filed:

Mar. 15, 2017
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Tsen-Kuei Wang, Hsinchu, TW;

Ming-Yung Jow, Hsinchu, TW;

Bor-Cherng Chen, Hsinchu, TW;

Tsung-Ta Yu, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hscinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/06 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/06 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/40 (2013.01); H01L 33/405 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; an electrode comprising a surface next to the semiconductor system; a contact material in the semiconductor system and in the electrode, wherein the contact material has a largest intensity at a first depth position in the electrode, and the contact material is selected from the group consisting of Be, Se, Sn, Zn, and combinations thereof; and a base material different from the base material and in the electrode.


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