The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2019

Filed:

Sep. 28, 2017
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Jincheng Gao, Beijing, CN;

Bin Zhang, Beijing, CN;

Xiaolong He, Beijing, CN;

Xiangchun Kong, Beijing, CN;

Qi Yao, Beijing, CN;

Zhanfeng Cao, Beijing, CN;

Zhengliang Li, Beijing, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78693 (2013.01); H01L 29/78696 (2013.01);
Abstract

A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.


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