The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2019

Filed:

May. 22, 2015
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Boe Optoelectronics Technology Co., Ltd., Anhui, CN;

Inventors:

Qinggao Zhou, Beijing, CN;

Peng Li, Beijing, CN;

Zhong Feng, Beijing, CN;

Panpan Meng, Beijing, CN;

Zuhong Liu, Beijing, CN;

Daeoh Oh, Beijing, CN;

Zhi Hou, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/02 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/786 (2013.01); H01L 27/02 (2013.01); H01L 27/124 (2013.01); H01L 29/41733 (2013.01); H01L 29/4232 (2013.01); H01L 29/42384 (2013.01); H01L 29/66742 (2013.01);
Abstract

The present disclosure provides a thin film transistor, a method for manufacturing the same, a thin film transistor assembly, an array substrate and a display apparatus. The thin film transistor comprises: a substrate; a gate electrode, a gate insulation portion, a semiconductor portion, a source electrode and a drain electrode, the gate insulation portion separating the semiconductor portion from the gate electrode, and the source electrode and the drain electrode being connected to the semiconductor portion, wherein a projection of the gate electrode onto the substrate and that of the semiconductor portion onto the substrate are not overlapped with each other.


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