The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2019

Filed:

Jul. 04, 2014
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Kenji Hatori, Tokyo, JP;

Shuichi Kitamura, Tokyo, JP;

Tetsuo Motomiya, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 23/48 (2006.01); H01L 25/07 (2006.01); H01L 23/373 (2006.01); H01L 29/20 (2006.01); H01L 29/739 (2006.01); H01L 25/18 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); H01L 23/3736 (2013.01); H01L 23/48 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/291 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/49113 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10254 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01);
Abstract

An object is to provide a technique that enables suppression of oscillation of a gate signal waveform. A power semiconductor device includes a power semiconductor chip, a plurality of collector main terminals and a plurality of emitter main terminals electrically connected to the power semiconductor chip, and a signal line. The plurality of collector main terminals and the plurality of emitter main terminals have protrusion portions which protrude from a disposition surface of the power semiconductor chip, respectively, and the signal line surrounds, with respect to these protrusion portions, an entire circumference of all the protrusion portions and is spaced apart therefrom in plan view.


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