The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
May. 04, 2017
Applicants:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
National Institute for Materials Science, Tsukuba-shi, JP;
Inventors:
Tatsuo Shimizu, Shinagawa, JP;
Takahisa Ohno, Tsukuba, JP;
Tomoaki Kaneko, Tsukuba, JP;
Takahiro Yamasaki, Tsukuba, JP;
Nobuo Tajima, Tsukuba, JP;
Jun Nara, Tsukuba, JP;
Assignees:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
National Institute for Materials Science, Tsukuba-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/67 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66068 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/02348 (2013.01); H01L 21/049 (2013.01); H01L 21/67115 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/408 (2013.01); H01L 29/517 (2013.01); H01L 29/7802 (2013.01);
Abstract
A semiconductor device according to an embodiment includes a silicon carbide layer, a gate electrode, and a silicon oxide layer disposed between the silicon carbide layer and the gate electrode, a number of single bonds between carbon atoms being larger than that of double bonds between carbon atoms in the silicon oxide layer.