The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Aug. 18, 2016
Applicant:
Uchicago Argonne, Llc, Chicago, IL (US);
Inventors:
Anirudha V. Sumant, Plainfield, IL (US);
Kiran Kumar Kovi, Lemont, IL (US);
Assignee:
UChicago Argonne, LLC, Chicago, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/267 (2006.01); H01L 21/04 (2006.01); H01L 21/441 (2006.01); H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/043 (2013.01); H01L 21/441 (2013.01); H01L 29/6603 (2013.01); H01L 29/861 (2013.01); H01L 21/0217 (2013.01); H01L 21/02112 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 29/04 (2013.01); H01L 29/45 (2013.01);
Abstract
A method of forming a p-n junction device comprises providing a base layer including a p-type diamond. A monolayer or few layer of a transition metal dichalcogenide (TMDC) is disposed on at least a portion of the base layer so as to form a heterojunction therebetween. The TMDC monolayer is an n-type layer such that the heterojunction between the intrinsic and p-type diamond base layer and the n-type TMDC monolayer is a p-n junction.